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Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — says that its new EPC2378 25V eGaN power transistor has entered mass production, enabling high-density power system designers to achieve higher efficiency, faster switching and greater power density in demanding DC–DC conversion applications. EPC2378 is optimized for synchronous rectifier applications on the secondary side of a 48V-8 or 5V LLC converter. In addition to what is claimed to be the best-in-class 410µΩ typical RDS(on), the devices have an industry-leading low RDS(on) x QG figure of merit that enables higher-frequency and higher-efficiency operation. These capabilities are of particular value in fast-growth markets such as AI infrastructure, data centers, telecom, industrial systems and advanced computing platforms...

Source: https://www.semiconductor-today.com/new ... 0626.shtml