SCT Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs
Posted: Tue Jun 09, 2026 8:37 am
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA has launched its new UHV‑TO‑247‑4‑ISO package, setting what is claimed to be a new benchmark for high‑performance discrete power devices...
Source: https://www.semiconductor-today.com/new ... 0626.shtml
Source: https://www.semiconductor-today.com/new ... 0626.shtml