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ULTRARAM compound semiconductor memory technology developer QuInAs Technology Ltd of London, UK (which was spun off from Lancaster University in early 2023) has reported work that links device-level physics — including resonant tunnelling and floating-gate dynamics — directly to AI system performance through compact modelling and hardware-aware benchmarking, addressing a key limitation in how emerging memory technologies are typically evaluated. Published in Journal of Applied Physics, the paper ‘Artificial synapse based on ULTRARAM memory device for neuromorphic applications’ demonstrates how ULTRARAM can be modelled and evaluated as a synaptic memory element for next-generation AI hardware...

Source: https://www.semiconductor-today.com/new ... 0426.shtml