Researchers from MIT, SLAC, Stanford University, and Argonne National Laboratory published a technical paper titled “Spatiotemporal mapping of anisotropic thermal transport in GaN thin films via ultrafast X-ray diffraction.” Abstract Excerpt: The paper presents a “non-contact, spatiotemporal-resolved ultrafast X-ray diffraction method to extract in-plane thermal conductivity and thermal boundary conductance, using GaN thin films on silicon as a model system.” Find the technical paper here. July 2026. MIT’s news summary on the research is here. Nguyen, Thanh, Chuliang Fu, Mouyang Cheng, et al. “Spatiotemporal Mapping of Anisotropic Thermal Transport in GaN Thin Films via Ultrafast X-Ray Diffraction.” Nature Communications, 2026. https://doi.org/10.1038/s41467-026-75414-w. The post Ultrafast X-Ray Diffraction Maps Thermal Transport In GaN Thin Films (MIT, SLAC, Stanford, Argonne) appeared first on Semiconductor Engineering.
Source: https://semiengineering.com/ultrafast-x ... d-argonne/