Infineon Technologies AG of Munich, Germany has begun sampling silicon carbide (SiC) bidirectional switches (BDS) built on rugged 750V CoolSiC G2 technology. A vertically integrated dual-die with common drain design in a top-side-cooled Q-DPAK package integrates two power switches into one to simplify design and enable the evolution of legacy topologies. The 750V CoolSiC BDS is said to deliver the reliability margin that modern grids and energy systems demand, resulting in the lowest total cost of ownership during the application lifetime...
Source: https://www.semiconductor-today.com/new ... 0626.shtml