A gallium nitride (GaN) high-electron-mobility transistor (HEMT) incorporating the proprietary reGaN selective regrowth technology of IVWorks Co Ltd of Daejeon, South Korea has become the world’s first GaN transistor to achieve a maximum oscillation frequency (fmax) exceeding 700GHz. This was demonstrated through a 45nm GaN HEMT device developed by professor Dae-hyun Kim’s research team in the School of Electronics Engineering at Kyungpook National University and was unveiled on 18 June at the 2026 IEEE/JSAP Symposium on VLSI Technology & Circuits in Honolulu, Hawaii, USA...
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