New gallium nitride (GaN)-based power semiconductors from STMicroelectronics of Geneva, Switzerland are designed to improve efficiency and increase power density in high-voltage power supplies for high-demand applications that support electrification. The 700V PowerGaN devices in the STPOWER portfolio address challenges such as rising AI server power consumption and the need for higher-performance power conversion beyond the limits of conventional silicon technologies...
Source: https://www.semiconductor-today.com/new ... 0526.shtml