Infineon Technologies AG of Munich, Germany has expanded its CoolGaN portfolio with the CoolGaN Drive HB 600V G5 product family. The four new devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M – integrate two 600V GaN switches in a half-bridge configuration together with integrated high- and low-side gate drivers and a bootstrap diode, delivering a compact, thermally optimized power stage that further reduces design complexity. By bringing key functions into one optimized package, the family lowers external component count, eases PCB layout challenges typically associated with fast-switching GaN, and helps designers to shorten development cycles while achieving the core advantages of GaN technology: higher switching frequencies, lower switching and conduction losses, and greater power density...
Source: https://www.semiconductor-today.com/new ... 0226.shtml